By Roel Gronheid, Paul Nealey
The directed self-assembly (DSA) approach to patterning for microelectronics makes use of polymer phase-separation to generate good points of below 20nm, with the positions of self-assembling fabrics externally guided into the specified development. Directed self-assembly of Block Co-polymers for Nano-manufacturing reviews the layout, construction, functions and destiny advancements had to facilitate the widescale adoption of this promising technology.
Beginning with a fantastic evaluation of the physics and chemistry of block copolymer (BCP) fabrics, half 1 covers the synthesis of latest fabrics and new processing equipment for DSA. Part 2 then is going directly to define the major modelling and characterization ideas of DSA, reviewing templates and patterning utilizing topographical and chemically transformed surfaces, line aspect roughness and dimensional keep watch over, x-ray scattering for characterization, and nanoscale pushed meeting. eventually, half three discusses software components and similar concerns for DSA in nano-manufacturing, together with for uncomplicated good judgment circuit layout, the inverse DSA challenge, layout decomposition and the modelling and research of enormous scale, template self-assembly production techniques.
- Authoritative outlining of theoretical ideas and modeling options to provide a radical introdution to the topic
- Discusses a extensive diversity of practical applications for directed self-assembly in nano-manufacturing
- Highlights the significance of this expertise to either the present and way forward for nano-manufacturing by exploring its power use in more than a few fields
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Extra info for Directed Self-assembly of Block Co-polymers for Nano-manufacturing
00002-X © 2015 Published by Elsevier Ltd. , 2010). or solvolytic destruction of thiocarbonylthio groups. , 2006). , styrene) has been inserted adjacent to the thiocarbonylthio moiety, temperature constraints are reduced by comparison. Polymerization at the highest feasible monomer content, under the constraints of good mixing, adequate heat transfer, manageable viscosity, and low radical flux are general process guidelines that facilitate maximal selectivity in polymer end-group labeling. , 2006; Urbani and Monteiro, 2008).
RAFT polymerization processes have been developed to produce several classes of materials for electronic applications, including positive- and negative-tone resists (styrenics for 248 nm photoresists; methacrylates for 193 and 193i systems), interface- controlling additives, and self-assembling diblock polymers. Important synthetic or process elements include scalable polymerization reactions, product isolation and separation schemes, and thiocarbonylthio-RAFT end-group removal methods. Low polydispersity and high compositional uniformity HCU™ were the main polymer properties sought after using the RAFT process to provide application performance improvements, for example, more uniform polymer dissolution leading to lower line edge roughness.
J. Phys. Chem. 74, 632. doi. 1021/j100698a026. B. T. Sheehan† * E. I. , 2005). 1 The collaboration in the field of controlled free radical polymerization between CSIRO and DuPont began more than 20 years ago and continues to be important for the further development and commercialization of RAFT. These commercial developments include applications in electroactive polymers, compatibilizers, thermoplastic elastomers, protective finishes, dispersants, polymer microgels for aqueous coatings, high-resolution patterning applications, including photoresists, and more recently in block copolymers for self-assembly (directed self-assembly (DSA)).