Diode Laser Materials and Devices. A Worldwide Market & by Roy Szweda (Auth.)

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By Roy Szweda (Auth.)

Content material:
List of Tables

, Pages ix-xii

, Pages xiii-xvi
Chapter 1 - Introduction

, Pages 1-4
Chapter 2 - government Summary

, Pages 5-24
Chapter three - Diode Laser fabrics Markets

, Pages 25-65
Chapter four - program industry Overview

, Pages 67-156
Chapter five - know-how Overview

, Pages 157-206
Chapter 6 - corporation Profiles

, Pages 207-323
Chapter 7 - Geographical record of Universities and chosen business Labs

, Pages 325-398
Chapter eight listing of prime Suppliers

, Pages 399-509,I
Chapter nine Appendices

, Pages 511-528

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Extra info for Diode Laser Materials and Devices. A Worldwide Market & Technolgy Overview to 2005

Sample text

This is due to two factors: 9 9 Increased demand from device manufacturers wishing to accrue improved economics; and Substrate suppliers making these more attractive and wanting to enlarge market share. This market was also under considerable pricing pressure. Previously, substrate price erosion was helped by government subsidies such as the Title III Program in the USA. However, the differential with silicon substrates will remain substantial. While new crystal growth technologies might provide lower price substrates due to various factors such as higher yields or longer ingots, this has yet to be proved in the field by any major manufacturer.

However, so far it has achieved only a limited penetration of microwave device suppliers. 5 Worldwide Diode Laser Substrate Market by Size 2005 (%) More information on crystal growth technologies is given in Chapter 5. Today's substrate marketplace is characterized by the broadest range of available diameters in its history. The principal diameters are 2-, 3-, 4- and 6-in. The larger-diameter wafers have been demonstrated for optoelectronics applications but are not likely to be commercially significant outside the microwave sector for at least another three years owing to the need to scale up the back-end device processing capabilities of existing plant.

Use of 2-in substrates will also continue in R&D but will suffer the disadvantage of higher prices as volume users exit this market segment. 9 9 Recently, leading substrate manufacturers such as Freiberger Compound Materials (FCM) have already announced cessation of 2-in SI substrate manufacture. However, these are still available via other lower tier players such as Atomergic, which sources its products in part from the former Soviet Union. The most important size for volume production of certain types of GaAs microelectronic devices is 6-in which already accounted for 11% of the market in 2000.

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