By de Carvalho Bezerra S., Tindel S.
During this notice, we give some thought to a SK (Sherrington-Kirkpatrick)-type version on ℤ d for d≥1, weighted by way of a functionality permitting to any unmarried spin to have interaction with a small share of the opposite ones. within the thermodynamical restrict, we examine the equivalence of this version with the standard SK spin method, during the research of the fluctuations of the loose strength.
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Additional resources for A Central Limit Theorem for a Localized Version of the SK Model
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The possibility of growing high quality multilayer heterostructures with excellent control of uniformity in layer thickness and composition, has led to tremendous progress in device developments in the last years. In this progress a continuous interplay between device improvements and advances in materials has taken place. The evolution of metalorganic chemical vapor deposition, MOCVD, as a growth technology for multilayer heterostructures has provided access to improved and new device concepts and facilitated the large scale fabrication of multilayer device structures.